Methods of forming oxide isolation regions for integrated circui

Details Methods of forming oxide isolation regions for integrated circui Methods of forming oxide isolation regions for integrated circui

1997-08-29

1999-08-17

Chaudhuri, Olik

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438444, H01L 2176, H01L 21762

Patent

active

059407204

ABSTRACT:
Oxide isolation regions are fabricated for integrated circuit substrates by forming a pad layer on an integrated circuit substrate and forming a silicon nitride mask on the pad layer. The mask exposes a portion of the pad layer. The exposed portion of the pad layer is thinned to thereby define a pad layer sidewall. A silicon nitride layer is formed on the silicon nitride mask, on the thinned pad layer and on the pad layer sidewall. The silicon nitride layer is selectively etched to form a silicon nitride spacer on the pad layer sidewall. The integrated circuit substrate is then oxidized, using the silicon nitride mask and the silicon nitride spacer as an oxidation mask, to thereby form an oxide isolation region in the thinned portion of the pad layer and in the integrated circuit substrate beneath the pad layer.

REFERENCES:
patent: 5397733 (1995-03-01), Jang
patent: 5629230 (1997-05-01), Fazan et al.
patent: 5679599 (1997-10-01), Mehta
Stanley Wolf, Silicon Processing for the VLSI Era, vol. 1: Process Technology, Lattice Press, pp. 529 and 530, 1986.

Affiliated with

Also associated with

Rating

Methods of forming oxide isolation regions for integrated circui does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of forming oxide isolation regions for integrated circui, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming oxide isolation regions for integrated circui will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-325161