Methods of forming nonvolatile memory devices

Details Methods of forming nonvolatile memory devices Methods of forming nonvolatile memory devices

2008-07-15

2008-07-15

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S266000, C257S314000, C257SE21680, C257SE21691

Reexamination Certificate

active

11375983

ABSTRACT:
Methods of forming a memory device include forming a device isolation layer in a semiconductor substrate including a cell array region and a resistor region, the device isolation layer extending into the resistor region and defining an active region in the semiconductor substrate. A first conductive layer is formed on the device isolation layer in the resistor region. The semiconductor substrate is exposed in the cell array region. A cell insulation layer is formed on a portion of the semiconductor substrate including the exposed cell array region, the active region and the device isolation layer in the resistor region. A second conductive layer is formed on the cell insulation layer in the portion of the semiconductor substrate including the exposed cell array region, the active region and the device isolation layer in the resistor region. The second conductive layer is etched to form a cell gate electrode in the cell array region and to concurrently remove the second conductive layer from the resistor region and the first conductive layer is etched in the resistor region to form a resistor.

REFERENCES:
patent: 6559055 (2003-05-01), Tuan et al.
patent: 6962840 (2005-11-01), Kim
patent: 7157762 (2007-01-01), Lee
patent: 2003-204003 (2003-07-01), None
patent: 1020030086825 (2003-11-01), None
patent: 1020040054575 (2004-06-01), None

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