Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-08-16
2009-02-24
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S211000, C438S257000, C438S593000, C438S508000, C257S317000, C257SE21422, C257SE21680
Reexamination Certificate
active
07494860
ABSTRACT:
In a nonvolatile memory using floating gates to store charge, individual floating gates are L-shaped. Orientations of L-shaped floating gates may alternate in the bit line direction and may also alternate in the word line direction. L-shaped floating gates are formed by etching conductive portions using etch masks of different patterns to obtain floating gates of different orientations.
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Pham Thanh V
SanDisk Corporation
Vierra Magen Marcus & DeNiro LLP
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