Methods of forming nonmonocrystalline silicon-on-insulator thin-

Details Methods of forming nonmonocrystalline silicon-on-insulator thin- Methods of forming nonmonocrystalline silicon-on-insulator thin-

1996-07-25

1998-11-24

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438154, 438161, 438164, H01L 218238, H01L 2184

Patent

active

058406026

ABSTRACT:
Methods of forming thin-film transistors include the steps of forming an amorphous silicon (a-Si) layer of predetermined conductivity type on a face of an electrically insulating substrate and then forming a first insulating layer on the amorphous silicon layer. The first insulating layer and amorphous silicon layer are then patterned to define spaced amorphous source and drain regions having exposed sidewalls. An amorphous silicon channel region is then deposited in the space between the source and drain regions and in contact with the sidewalls thereof. An annealing step is then performed to convert the amorphous source, drain and channel regions to polycrystalline silicon, prior to the step of forming an insulated gate electrode on the channel region.

REFERENCES:
patent: 5318919 (1994-06-01), Noguchi
patent: 5372958 (1994-12-01), Miyasaka et al.
patent: 5488005 (1996-01-01), Han et al.
patent: 5508216 (1996-04-01), Inoue
patent: 5561075 (1996-10-01), Nakazawa

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