Methods of forming non-volatile memory structure with...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S257000, C438S261000, C438S287000, C257S317000, C257S324000, C365S185010, C365S185050

Reexamination Certificate

active

08062945

ABSTRACT:
Embodiments of methods of forming non-volatile memory structures are provided. In one such embodiment, first and second source/drain regions are formed on a substrate so that the first and second source/drain regions define an intervening channel region. A charge blocking layer is formed over the channel region. A trapping layer is formed over the charge blocking layer. A tunnel layer of two or more sub-layers is formed over the trapping layer, where the two or more sub-layers form a crested barrier tunnel layer. A control gate is formed over the tunnel layer.

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