Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-11-22
2005-11-22
Zarneke, David (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S240000, C438S241000, C438S238000, C438S253000, C438S256000, C438S381000, C438S393000, C438S399000, C438S202000, C438S627000, C438S643000, C438S653000
Reexamination Certificate
active
06967134
ABSTRACT:
The invention encompasses a method of forming a silicon nitride layer. A substrate is provided which comprises a first mass and a second mass. The first mass comprises silicon and the second mass comprises silicon oxide. A sacrificial layer is formed over the first mass. While the sacrificial layer is over the first mass, a nitrogen-containing material is formed across the second mass. After the nitrogen-containing material is formed, the sacrificial layer is removed. Subsequently, a silicon nitride layer is formed to extend across the first and second masses, with the silicon nitride layer being over the nitrogen-containing material. Also, a conductivity-enhancing dopant is provided within the first mass. The invention also pertains to methods of forming capacitor constructions.
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Ping Er-Xuan
Yin Zhiping
Micro)n Technology, Inc.
Wells St. John P.S.
Yevsikov Victor V.
Zarneke David
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