Methods of forming nitride read only memory and word lines...

Details Methods of forming nitride read only memory and word lines... Methods of forming nitride read only memory and word lines...

2007-10-17

2009-06-09

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S630000, C438S649000, C438S655000, C438S664000, C438S669000, C438S721000, C438S755000, C257SE21199, C257SE21165, C257SE21438, C257SE21657, C257SE21658

Reexamination Certificate

active

07544616

ABSTRACT:
A method of forming word lines of a memory includes providing a substrate and forming a conductive layer on the substrate. A metal silicide layer is formed on the conductive layer, and a mask pattern is formed on the metal silicide layer. A mask liner covering the mask pattern and the surface of the metal silicide layer is formed on the substrate to shorten distances between the word line regions. An etching process is performed on the mask liner and the mask pattern until the partial surface of the metal silicide layer is exposed. The metal silicide layer and the conductive layer are etched to form word lines by utilizing the mask liner and the mask pattern as a mask. A silicon content of the metal silicide layer must be less than or equal to 2 for reducing a bridge failure rate between the word lines.

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