Methods of forming nitride dielectric layers having reduced expo

Details Methods of forming nitride dielectric layers having reduced expo Methods of forming nitride dielectric layers having reduced expo

1998-02-09

2000-12-12

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438255, 438398, H01L 2144, H01L 218242

Patent

active

061598496

ABSTRACT:
of A method of forming a dielectric layer includes the steps of forming an electrode on a microelectronic substrate, and forming depressions and protrusions on exposed portions of the electrode thereby increasing a surface area thereof. An exposed portion of the electrode including the depressions and protrusions is nitrified, and the electrode is not exposed to oxygen during and between the steps of forming the depressions and protrusions and nitrifying the exposed portion of the electrode. A nitride layer is then formed on a nitrified electrode. Related structures are also discussed.

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