Methods of forming nano-devices using nanostructures having...

Details Methods of forming nano-devices using nanostructures having... Methods of forming nano-devices using nanostructures having...

2011-07-12

2011-07-12

Chen, Jack (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S585000, C438S299000, C257SE21346

Reexamination Certificate

active

07977177

ABSTRACT:
Provided are methods of forming nano-devices. One of the methods includes forming a nano-scale self-assembly material layer on a substrate formed of at least one layer, forming a mask layer on the self-assembly material layer, performing a surface treatment process on the substrate using the mask layer as a mask, and removing the self-assembly material layer. Accordingly, it is possible to fabricate nano-devices through a nano-scale substrate patterning process, ion implantation process and etching process, without using a light source.

REFERENCES:
patent: 6255469 (2001-07-01), Seeman et al.
patent: 6946675 (2005-09-01), Braun et al.
patent: 2007/0117109 (2007-05-01), Rothemund
patent: 2010/0093160 (2010-04-01), Roh et al.

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