Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2010-03-23
2011-10-04
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21179
Reexamination Certificate
active
08030160
ABSTRACT:
A string of nonvolatile memory cells connected in series includes fixed charges located between floating gates and the underlying substrate surface. Such a fixed charge affects distribution of charge carriers in an underlying portion of the substrate and thus affects threshold voltage of a device. A fixed charge layer may extend over source/drain regions also.
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Chien Henry
Kai James
Matamis George
Orimoto Takashi
Booth Richard A.
SanDisk Technologies Inc.
Vierra Magen Marcus & DeNiro LLP
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