Methods of forming metal wiring of semiconductor devices...

Details Methods of forming metal wiring of semiconductor devices... Methods of forming metal wiring of semiconductor devices...

2006-06-13

2006-06-13

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S620000, C438S622000, C438S628000

Reexamination Certificate

active

07060603

ABSTRACT:
A formation method of metal wiring of a semiconductor device is disclosed. According to one example, an example method may include forming a metal wire on a pre metal dielectric (“PMD”) on a semiconductor substrate; patterning and sintering the metal wire; forming an insulating layer on the metal wire and the PMD; and forming a via hole in the insulating layer. The example method may further include forming a barrier metal layer made of multiple metal layers on inner wall of the via hole and upper surface of the insulating layer using physical vapor deposition and chemical vapor deposition; filling up inside the via hole by forming a metallic material on the metal layer; and forming a metallic material via by chemical mechanical polishing of the metallic material and the barrier metal layer until the insulating layer is exposed.

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