Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-10-23
2007-10-23
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S589000
Reexamination Certificate
active
10909471
ABSTRACT:
Unit cells of metal oxide semiconductor (MOS) transistors are provided including an integrated circuit substrate and a MOS transistor on the integrated circuit substrate. The MOS transistor has a source region, a drain region and a gate region, the gate region being between the source region and the drain region. First and second channel regions are provided between the source and drain regions. The channel region is defined by first and second spaced apart protrusions in the integrated circuit substrate separated by a trench region. The first and second protrusions extend away from the integrated circuit substrate and upper surfaces of the first and second protrusions are substantially planar with upper surfaces of the source and drain regions. A gate electrode is provided in the trench region extending on sidewalls of the first and second spaced apart protrusions and on at least a portion of surfaces of the first and second spaced apart protrusions.
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Office Action issued by the Chinese Patent Office corresponding to Chinese Patent Application No. 200410055895.5, mailed Feb. 16, 2007.
Cho Hye-Jin
Choe Jeong-Dong
Kim Dong-Won
Kim Sung-Min
Lee Shin-Ae
Myers Bigel & Sibley Sajovec, PA
Smith Zandra V.
Thomas Toniae M
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