Methods of forming metal-nitride layers in contact holes

Details Methods of forming metal-nitride layers in contact holes Methods of forming metal-nitride layers in contact holes

2005-03-18

2009-06-02

Smith, Matthew (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S643000

Reexamination Certificate

active

07541282

ABSTRACT:
A metal layer can be formed in an integrated circuit by forming a metal-nitride layer in a recess including a first concentration of nitrogen in the metal-nitride layer at a bottom of the recess that is less than a second concentration of nitrogen in the metal-nitride layer proximate an opening of the recess. A metal layer can be formed on the metal-nitride layer including in the recess.

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English Translation of Office Action issued by the German Patent Office for Application No. 10 2005 023 670.7-33; Oct. 16, 2006.
Notice to Submit a Response for Korean Patent Application No. 10-2004-0037328 on Nov. 21, 2005.

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