Methods of forming metal nitride layers, and methods of...

Details Methods of forming metal nitride layers, and methods of... Methods of forming metal nitride layers, and methods of...

2007-11-27

2007-11-27

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S648000, C438S656000, C257SE29160

Reexamination Certificate

active

11227542

ABSTRACT:
Methods of forming metal nitride layers on a substrate include reacting a metal source gas with a nitrogen source gas in a process chamber to form a metal nitride layer on the substrate. The process chamber may have an atmosphere having a pressure of about 0.1 mTorr to about 5 mTorr and a temperature of about 200° C. to about 450° C. A ratio of the flow rate of the metal source gas to the flow rate of the nitrogen source gas may be “1” or more. An interlayer insulating layer may be formed on the semiconductor substrate prior to formation of the metal nitride layer. Some methods include forming a contact hole in the interlayer insulating layer to expose a portion of the semiconductor substrate prior to forming the metal nitride layer

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patent: 2005/0079696 (2005-04-01), Colombo
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