Methods of forming metal layers in the fabrication of...

Details Methods of forming metal layers in the fabrication of... Methods of forming metal layers in the fabrication of...

2007-02-15

2009-06-16

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21586, C438S685000

Reexamination Certificate

active

07547632

ABSTRACT:
A metal deposition processing apparatus includes a first processing chamber configured for holding a semiconductor substrate therein. A second processing chamber is configured for holding the semiconductor substrate therein and for forming an upper metal layer thereon. A transfer chamber is connected to the first processing chamber and the second processing chamber. The transfer chamber is configured to transfer the semiconductor substrate between the first processing chamber and the second processing chamber.

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patent: 6740585 (2004-05-01), Yoon et al.
patent: 6800494 (2004-10-01), Castle et al.
patent: 2002/0187644 (2002-12-01), Baum et al.
Notice to File a Response for Korean patent application No. 10-2003-0045786 mailed on Apr. 26, 2005.

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