Methods of forming metal interconnections of semiconductor...

Details Methods of forming metal interconnections of semiconductor... Methods of forming metal interconnections of semiconductor...

2005-10-18

2005-10-18

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S652000, C438S643000, C438S654000

Reexamination Certificate

active

06955983

ABSTRACT:
A metal interconnection of a semiconductor device is fabricated by forming a dielectric pattern including a hole therein on a substrate, and forming a barrier metal layer in the hole and on the dielectric layer pattern outside the hole. At least some of the barrier metal layer is oxidized. An anti-nucleation layer is selectively formed on the oxidized barrier metal layer outside the hole that exposes the oxidized barrier metal layer in the hole. A metal layer then is selectively formed on the exposed oxidized barrier layer in the hole.

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Notice to Submit Response, Korean Application No. 10-2002-0030294, May 6, 2004.

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