Methods of forming metal interconnections including thermally tr

Details Methods of forming metal interconnections including thermally tr Methods of forming metal interconnections including thermally tr

1999-03-16

2000-06-20

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438637, 438643, 438644, 438653, 438622, 257751, 257750, H01L 214763

Patent

active

060777729

ABSTRACT:
A method of forming a metal interconnection includes the steps of forming a first conductive layer on a substrate, and forming an insulating layer on the first conductive layer and on the substrate. A contact hole is formed in the insulating layer thereby exposing a portion of the first conductive layer, a barrier layer is formed on the exposed portion of the first conductive layer in the contact hole, and a thermal treatment is performed on the barrier layer. After the step of performing the thermal treatment, a wetting layer is formed on a sidewall of the contact hole, and a second conductive layer is formed on the barrier layer and on the wetting layer in the contact hole.

REFERENCES:
patent: 4715937 (1987-12-01), Moslehi et al.
patent: 5202579 (1993-04-01), Fujii et al.
patent: 5514908 (1996-05-01), Liao et al.
patent: 5677238 (1997-10-01), Gn et al.
patent: 5956609 (1999-09-01), Lee et al.
patent: 5960317 (1999-09-01), Jeong

Affiliated with

Also associated with

Rating

Methods of forming metal interconnections including thermally tr does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of forming metal interconnections including thermally tr, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming metal interconnections including thermally tr will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1851854