Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-03-18
2009-11-24
Andújar, Leonardo (Department: 2893)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
Reexamination Certificate
active
07622379
ABSTRACT:
Methods of forming a metal contact structure include forming an interlayer insulating layer on a substrate, etching the interlayer insulating layer to form a hole, depositing a metal layer on the surface of the interlayer insulating layer including inside the hole, planarizing the metal layer to provide a buried portion of the metal layer in the hole and to remove portions of the metal layer outside of the hole, etching-back the buried portion of the metal layer in the hole such that some of the portion of the metal layer within the hole remains and depositing a conductive layer on the surface of the interlayer insulating layer and the portion of the metal layer that remains within the hole. Methods of forming a phase change memory device are also provided.
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Notice to Submit a Response for Korean Patent Application No. 10-2004-0060912 mailed on Feb. 24, 2006.
Cho Byeong-ok
Choi Suk-Hun
Nam Sang-don
Son Yoon-ho
Andújar Leonardo
Harrison Monica D
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
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