Methods of forming memory circuitry

Details Methods of forming memory circuitry Methods of forming memory circuitry

2006-09-05

2008-09-02

Louie, Wai-Sing (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S211000, C438S257000, C257S314000, C257S315000, C257S316000, C257S320000, C257S326000, C257SE21640, C257SE21660, C257SE29170

Reexamination Certificate

active

07419865

ABSTRACT:
The invention includes methods of forming memory circuitry. In one implementation, a semiconductor substrate includes a pair of word lines having a bit node received therebetween. A bit node contact opening is formed within insulative material over the bit node. Sacrificial plugging material is formed within the bit node contact opening between the pair of word lines. Sacrificial plugging material is removed from the bit node contact opening between the pair of word lines, and it is replaced with conductive material that is in electrical connection with the bit node. Thereafter, the conductive material is formed into a bit line.

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