Methods of forming materials

Details Methods of forming materials Methods of forming materials

2008-05-06

2008-05-06

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S780000, C438S787000, C257SE21170, C257SE21240, C257SE21159, C257SE21224, C257SE21267, C257SE21277

Reexamination Certificate

active

07368381

ABSTRACT:
The invention includes methods of forming films over substrates. A substrate is provided within a reaction chamber, and a mixture is also provided within the chamber. The mixture includes a precursor of a desired material within a supercritical fluid. The precursor is relatively reactive under one set of conditions and is relatively non-reactive under another set of conditions. The precursor and supercritical fluid mixture is initially provided in the chamber under the conditions at which the precursor is relatively non-reactive. Subsequently, and while maintaining the supercritical state of the supercritical fluid, the conditions within the reaction chamber are changed to the conditions under which the precursor is relatively reactive. The precursor reacts to form the desired material, and at least some of the desired material forms a film on the substrate.

REFERENCES:
patent: 4572841 (1986-02-01), Kaganowicz et al.
patent: 4970093 (1990-11-01), Sievers et al.
patent: 4993361 (1991-02-01), Unvala
patent: 5393564 (1995-02-01), Westmoreland et al.
patent: 5795821 (1998-08-01), Bacchetta et al.
patent: 5916365 (1999-06-01), Sherman
patent: 5983906 (1999-11-01), Zhao et al.
patent: 6039834 (2000-03-01), Tanaka et al.
patent: 6040010 (2000-03-01), Srinivasan et al.
patent: 6077792 (2000-06-01), Farrar
patent: 6413827 (2002-07-01), Farrar
patent: 6737723 (2004-05-01), Farrar
patent: 6835664 (2004-12-01), Sarigiannis et al.
patent: 6881642 (2005-04-01), Basceri et al.
patent: 6884737 (2005-04-01), Blackburn et al.
patent: 7087525 (2006-08-01), Sarigiannis et al.
patent: 2002/0117399 (2002-08-01), Chen et al.
patent: WO 02/27063 (2002-04-01), None
“Atomic Layer Deposition of SiO2Using Catalyzed and Uncatalyzed Self-Limiting Surface Reactions” J.W. Klause et al.; Surface Review & Ltrs; vol. 6, No. 3 & $, pp. 435-448, Apr. 1999.
“Self-limiting chemical vapor deposition of an ultra-thin silicon oxide film using tri-(tert-butoxy) silanol)” K.A. Miller et al.; Thin Solid Films 397, pp. 78-82, Aug. 2001.
“Reactive Deposition of Metal Thin Films within Porous Supports from Supercritical Fluids” N.E. Fernandes, et al.; American Chemical Society pp. 2023-2031, Oct. 2000; Jan. 2001.
“Supercritical CO2Processing for Submicron Imaging of Fluoropolymers” N. Sundararajan, et al.; American Chemical Society, pp. 41-48, Apr. 1999, Nov. 1999.
“Supercritical Fluid Transport-Chemical Deposition of Films” B.N. Hansen, et al.; American Chemical Society, pp. 749-752, Sep. 1991, May 1992.

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