Methods of forming low leakage currents...

Details Methods of forming low leakage currents... Methods of forming low leakage currents...

2007-09-18

2007-09-18

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S240000, C438S381000, C438S396000, C257S306000, C257S310000, C257S532000

Reexamination Certificate

active

11203347

ABSTRACT:
Methods of forming MIM comprise forming a lower electrode on a semiconductor substrate, forming a lower dielectric layer on the lower electrode, and forming an upper dielectric layer on the lower dielectric layer. The lower dielectric layer may be formed of dielectrics having larger energy band gap than that of the upper dielectric layer. An upper electrode is formed on the upper dielectric layer. The upper electrode may be formed of a metal layer having a higher work function than that of the lower electrode.

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