Methods of forming layers comprising epitaxial silicon

Details Methods of forming layers comprising epitaxial silicon Methods of forming layers comprising epitaxial silicon

2007-02-28

2010-10-05

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S173000, C438S429000, C438S481000, C438S762000, C257SE21131, C257SE21410, C257SE21643

Reexamination Certificate

active

07807535

ABSTRACT:
The invention includes methods of forming layers comprising epitaxial silicon. In one implementation, an opening is formed within a first material received over a monocrystalline material. Opposing walls, of a second material, are formed within the opening which are laterally displaced inwardly of the opposing sidewalls, a space being received between the opposing walls and the opposing sidewalls, with monocrystalline material being exposed between the opposing walls within the opening. A silicon-comprising layer is epitaxially grown from the exposed monocrystalline material within the second material-lined opening. Other aspects and implementations are contemplated.

REFERENCES:
patent: 4526631 (1985-07-01), Silvestri et al.
patent: 4528047 (1985-07-01), Beyer et al.
patent: 4758531 (1988-07-01), Beyer et al.
patent: 4816098 (1989-03-01), Davis et al.
patent: 4847210 (1989-07-01), Hwang et al.
patent: 5039625 (1991-08-01), Reisman et al.
patent: 5073516 (1991-12-01), Moslehi
patent: 5198071 (1993-03-01), Scudder et al.
patent: 5248385 (1993-09-01), Powell
patent: 5250837 (1993-10-01), Sparks
patent: 5294286 (1994-03-01), Nishizawa et al.
patent: 5340754 (1994-08-01), Witek et al.
patent: 5460994 (1995-10-01), Kim
patent: 5599724 (1997-02-01), Yoshida
patent: 5707885 (1998-01-01), Lim
patent: 5753555 (1998-05-01), Hada
patent: 5763305 (1998-06-01), Chao
patent: 5786229 (1998-07-01), Park
patent: 6060746 (2000-05-01), Bertin et al.
patent: 6064081 (2000-05-01), Robinson et al.
patent: 6156620 (2000-12-01), Puchner et al.
patent: 6204532 (2001-03-01), Gambino et al.
patent: 6297531 (2001-10-01), Armacost et al.
patent: 6406962 (2002-06-01), Agnello et al.
patent: 6436770 (2002-08-01), Leung et al.
patent: 6437375 (2002-08-01), Beaman
patent: 6448129 (2002-09-01), Cho et al.
patent: 6492216 (2002-12-01), Yeo et al.
patent: 6506638 (2003-01-01), Yu
patent: 6518609 (2003-02-01), Ramesh
patent: 6605498 (2003-08-01), Murthy et al.
patent: 6617226 (2003-09-01), Suguro et al.
patent: 6624032 (2003-09-01), Alavi et al.
patent: 6632712 (2003-10-01), Ang et al.
patent: 6642539 (2003-11-01), Ramesh et al.
patent: 6660590 (2003-12-01), Yoo
patent: 6670689 (2003-12-01), Oh et al.
patent: 6703290 (2004-03-01), Boydston et al.
patent: 6713378 (2004-03-01), Drynan
patent: 6716687 (2004-04-01), Wang et al.
patent: 6716719 (2004-04-01), Clampitt et al.
patent: 6734082 (2004-05-01), Zheng et al.
patent: 6746923 (2004-06-01), Skotnicki et al.
patent: 6756625 (2004-06-01), Brown
patent: 6777744 (2004-08-01), Noble
patent: 6790713 (2004-09-01), Horch
patent: 6805962 (2004-10-01), Bedell et al.
patent: 6818533 (2004-11-01), Chen et al.
patent: 6855436 (2005-02-01), Bedell et al.
patent: 6858499 (2005-02-01), Bol
patent: 6860944 (2005-03-01), Ivanov et al.
patent: 6861158 (2005-03-01), Bedell et al.
patent: 6878592 (2005-04-01), Besser et al.
patent: 6878990 (2005-04-01), Yoo
patent: 6885069 (2005-04-01), Ohguro
patent: 6919258 (2005-07-01), Grant et al.
patent: 6946377 (2005-09-01), Chambers
patent: 7033877 (2006-04-01), Chaudhry et al.
patent: 7132338 (2006-11-01), Samoilov et al.
patent: 7144779 (2006-12-01), Ramaswamy et al.
patent: 7199419 (2007-04-01), Haller
patent: 7241655 (2007-07-01), Tang et al.
patent: 7262089 (2007-08-01), Abbott et al.
patent: 7528424 (2009-05-01), Ramaswamy
patent: 2001/0010962 (2001-08-01), Chen et al.
patent: 2001/0017392 (2001-08-01), Comfort et al.
patent: 2001/0025985 (2001-10-01), Noble
patent: 2001/0041438 (2001-11-01), Maeda et al.
patent: 2002/0081861 (2002-06-01), Robinson et al.
patent: 2003/0027406 (2003-02-01), Malone
patent: 2003/0141278 (2003-07-01), Chang et al.
patent: 2003/0153155 (2003-08-01), Wang et al.
patent: 2003/0194496 (2003-10-01), Xu et al.
patent: 2003/0211712 (2003-11-01), Chen et al.
patent: 2004/0241460 (2004-12-01), Bedell et al.
patent: 2005/0079691 (2005-04-01), Kim et al.
patent: 2005/0224800 (2005-10-01), Lindert et al.
patent: 2006/0046440 (2006-03-01), Ramaswamy et al.
patent: 2006/0046442 (2006-03-01), Ramaswamy et al.
patent: 2006/0046459 (2006-03-01), Ramaswamy et al.
patent: 2006/0051941 (2006-03-01), Blomiley et al.
patent: 2006/0081884 (2006-04-01), Abbott et al.
patent: 2006/0264010 (2006-11-01), Ramaswamy et al.
Bashir et al.,Characterization and modeling of sidewall defects in selective epitaxial growth of silicon, J. Vac. Sci. Technol. B 13(3), pp. 928-935 (May/Jun. 1995).

Affiliated with

Also associated with

Rating

Methods of forming layers comprising epitaxial silicon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of forming layers comprising epitaxial silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming layers comprising epitaxial silicon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4156018