Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-01-18
2011-01-18
Loke, Steven (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S629000, C438S624000, C438S626000, C438S631000, C257S315000
Reexamination Certificate
active
07871921
ABSTRACT:
An interconnection structure for a semiconductor device includes an inter-level insulation layer disposed on a semiconductor substrate. First contact constructions penetrate the inter-level insulation layer. Second contact constructions penetrate the inter-level insulation layer. Metal interconnections connect the first contact constructions to the second contact constructions on the inter-level insulation layer. The first contact constructions include first and second plugs stacked in sequence and the second contact constructions include the second plug.
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Notice to File a Response/Amendment to the Examination Report for Korean Patent Application No. 10-2004-0048119 mailed on Feb. 21, 2006.
“Translation of an Office Action issued by the German Patent and Trademark Office,” issued Jan. 4, 2007.
Hur Sung-Hoi
Kim Hyun-suk
Park Jin-Taek
Park Jong-Ho
Goodwin David
Loke Steven
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
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