Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-02-11
1999-06-29
Booth, Richard A.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438396, H01L 218242
Patent
active
059181222
ABSTRACT:
The invention includes a number of methods and structures pertaining to integrated circuitry. The invention encompasses a method of forming an integrated circuit comprising: a) forming an insulative material layer over a first node location and a second node location, the insulative material layer having an uppermost surface; and b) forming first and second conductive pedestals extending through the insulative material layer and in electrical connection with the first and second node locations, the conductive pedestals comprising exposed uppermost surfaces which are above the uppermost surface of the insulative material layer. The invention also encompasses an integrated circuit comprising: a) a first node location and a second node location within a semiconductor substrate; b) a transistor gate electrically connecting the first and second node locations; c) an insulative material layer over the semiconductor substrate, the insulative material layer comprising an uppermost surface; d) a first conductive pedestal extending through the insulative material layer and in electrical connection with the first node location; e) a second conductive pedestal extending through the insulative material layer and in electrical connection with the second node location; f) the conductive pedestals comprising uppermost surfaces which are at a common elevational height relative to one another and are above the uppermost surface of the insulative material layer in a region proximate the pedestals.
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Parekh Angela S.
Parekh Kunal R.
Booth Richard A.
Micro)n Technology, Inc.
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