Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2007-03-08
2009-06-02
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S694000, C438S696000, C438S700000, C438S508000
Reexamination Certificate
active
07541288
ABSTRACT:
Methods of forming integrated circuit devices include depositing an electrically insulating layer onto an integrated circuit substrate having integrated circuit structures thereon. This deposition step results in the formation of an electrically insulating layer having an undulating surface profile, which includes at least one peak and at least one valley adjacent to the at least one peak. A non-uniform thickening step is then performed. This non-uniform thickening step includes thickening a portion of the electrically insulating layer by redepositing portions of the electrically insulating layer from the least one peak to the at least one valley. This redeposition occurs using a sputter deposition technique that utilizes the electrically insulating layer as a sputter target.
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Fang Sunfei
Gutmann Alois
Kim Jun-jung
Ku Ja-hum
Kwon O-sung
Chartered Semiconductor Manufacturing Ltd.
Infineon - Technologies AG
International Business Machines - Corporation
Le Dung A.
Myers Bigel & Sibley & Sajovec
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