Methods of forming integrated circuit devices including a...

Details Methods of forming integrated circuit devices including a... Methods of forming integrated circuit devices including a...

2011-03-01

2011-03-01

Wojciechowicz, Edward (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S107000, C438S109000, C438S598000, C438S618000, C438S675000, C257S773000, C257S774000, C257S777000

Reexamination Certificate

active

07897512

ABSTRACT:
Integrated circuit devices have a first substrate layer and a first transistor on the first substrate layer. A first interlayer insulating film covers the first transistor. A second substrate layer is on the first interlayer insulating film and a second transistor is on the second substrate layer. A second interlayer insulating film covers the second transistor. A contact extends through the second interlayer insulating film, the second substrate layer and the first interlayer insulating film. The contact includes a lower contact and an upper contact that contacts an upper surface of the lower contact to define an interface therebetween. The interface is located at a height no greater than a height of a top surface of the second substrate and greater than a height of a bottom surface of the second substrate layer.

REFERENCES:
patent: 2008/0009115 (2008-01-01), Willer et al.
patent: 2008/0283838 (2008-11-01), Ishikawa
patent: 100577603 (2006-05-01), None
patent: 100583972 (2006-05-01), None
patent: 1020060057821 (2006-05-01), None

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