Methods of forming integrated circuit devices including...

Details Methods of forming integrated circuit devices including... Methods of forming integrated circuit devices including...

2007-05-22

2007-05-22

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21610

Reexamination Certificate

active

11200783

ABSTRACT:
Integrated circuit devices including raised source/drain structures having different heights are disclosed. An integrated circuit device can include a first raised source/drain structure having a first height above a substrate in a first region of the integrated circuit including devices formed at a first density. The integrated circuit device can further include a second raised source/drain structure having a second height that is greater than the first height in a second region of the integrated circuit including second devices formed at a second density that is less than the first density.

REFERENCES:
patent: 5093275 (1992-03-01), Tasch et al.
patent: 5168072 (1992-12-01), Moslehi
patent: 5504031 (1996-04-01), Hsu et al.
patent: 6127233 (2000-10-01), Rodder
patent: 6319782 (2001-11-01), Nakabayashi
patent: 6346447 (2002-02-01), Rodder
patent: 6570222 (2003-05-01), Nozaki et al.
patent: 6608354 (2003-08-01), Hokazono et al.
patent: 6744104 (2004-06-01), Aoki et al.
patent: 6812104 (2004-11-01), Nishinohara

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