Methods of forming integrated circuit devices having...

Details Methods of forming integrated circuit devices having... Methods of forming integrated circuit devices having...

2011-08-02

2011-08-02

Stark, Jarrett J (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S535000, C438S706000, C438S725000, C438S723000, C257S411000, C257SE21002, C257SE23179

Reexamination Certificate

active

07989333

ABSTRACT:
Methods of forming integrated circuit devices include forming a gate electrode on a substrate and forming a nitride layer on a sidewall and upper surface of the gate electrode. The nitride layer is then anisotropically oxidized under conditions that cause a first portion of the nitride layer extending on the upper surface of the gate electrode to be more heavily oxidized relative to a second portion of the nitride layer extending on the sidewall of the gate electrode. A ratio of a thickness of an oxidized first portion of the nitride layer relative to a thickness of an oxidized second portion of the nitride layer may be in a range from about 3:1 to about 7:1.

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