Methods of forming integrated circuit chips having...

Details Methods of forming integrated circuit chips having... Methods of forming integrated circuit chips having...

2011-01-25

2011-01-25

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE23011

Reexamination Certificate

active

07875552

ABSTRACT:
Methods of forming an integrated circuit device include forming an interlayer dielectric layer on a first surface of a semiconductor substrate and then forming an interconnect hole that extends through the interlayer dielectric layer and into the semiconductor substrate. A first sidewall spacer layer is formed on a sidewall of the interconnect hole. The semiconductor substrate at a bottom of the interconnect hole is isotropically etched to define an undercut recess in the semiconductor substrate. This etching step is performed using the first sidewall spacer layer as an etching mask. The interconnect hole and the uncut recess are then filled with a through-via electrode. A second surface of the semiconductor substrate is removed for a sufficient duration to expose the uncut recess containing the through-via electrode.

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Hirafune et al., “Packaging Technology for Imager Using Through-hole Interconnections in Si Substrate,” IEEE, Proceeding of HDP;04, pp. 303-306.

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