Methods of forming fin field effect transistors using...

Details Methods of forming fin field effect transistors using... Methods of forming fin field effect transistors using...

2007-11-20

2007-11-20

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21442

Reexamination Certificate

active

11020899

ABSTRACT:
A method of forming a fin field effect transistor on a semiconductor substrate includes forming a fin-shaped active region vertically protruding from the substrate. An oxide layer is formed on a top surface and opposing sidewalls of the fin-shaped active region. An oxidation barrier layer is formed on the opposing sidewalls of the fin-shaped active region and is planarized to a height no greater than about a height of the oxide layer to form a fin structure. The fin structure is oxidized to form a capping oxide layer on the top surface of the fin-shaped active region and to form at least one curved sidewall portion proximate the top surface of the fin-shaped active region. The oxidation barrier layer has a height sufficient to reduce oxidation on the sidewalls of the fin-shaped active region about halfway between the top surface and a base of the fin-shaped active region. Related devices are also discussed.

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U.S. Appl. No. 10/936,033, filed Sep. 8, 2004.
Notice to File a Response/Amendment to the Examination Report corresponding to Korean Patent Application No. 10-2004-0040986 mailed Dec. 19, 2005.

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