Methods of forming field effect transistors, methods of...

Details Methods of forming field effect transistors, methods of... Methods of forming field effect transistors, methods of...

2011-03-08

2011-03-08

Malsawma, Lex (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21419

Reexamination Certificate

active

07902028

ABSTRACT:
The invention includes methods of forming field effect transistors, methods of forming field effect transistor gates, methods of forming integrated circuitry comprising a transistor gate array and circuitry peripheral to the gate array, and methods of forming integrated circuitry comprising a transistor gate array including first gates and second grounded isolation gates. In one implementation, a method of forming a field effect transistor includes forming masking material over semiconductive material of a substrate. A trench is formed through the masking material and into the semiconductive material. Gate dielectric material is formed within the trench in the semiconductive material. Gate material is deposited within the trench in the masking material and within the trench in the semiconductive material over the gate dielectric material. Source/drain regions are formed. Other aspects and implementations are contemplated.

REFERENCES:
patent: 4455740 (1984-06-01), Iwai
patent: 4835741 (1989-05-01), Baglee
patent: 4922460 (1990-05-01), Furutani et al.
patent: 4931409 (1990-06-01), Nakajima et al.
patent: 4937641 (1990-06-01), Sunami et al.
patent: 4979004 (1990-12-01), Esquivel et al.
patent: 5013680 (1991-05-01), Lowrey et al.
patent: 5014110 (1991-05-01), Satoh
patent: 5021355 (1991-06-01), Dhong et al.
patent: 5047117 (1991-09-01), Roberts
patent: 5107459 (1992-04-01), Chu et al.
patent: 5108938 (1992-04-01), Solomon
patent: 5122848 (1992-06-01), Lee et al.
patent: 5160491 (1992-11-01), Mori
patent: 5254218 (1993-10-01), Roberts et al.
patent: 5281548 (1994-01-01), Prall
patent: 5358879 (1994-10-01), Brady et al.
patent: 5371024 (1994-12-01), Hieda et al.
patent: 5376575 (1994-12-01), Kim et al.
patent: 5392237 (1995-02-01), Lida
patent: 5413949 (1995-05-01), Hong
patent: 5446299 (1995-08-01), Acovic et al.
patent: 5472893 (1995-12-01), Lida
patent: 5480838 (1996-01-01), Mitsui
patent: 5502320 (1996-03-01), Yamada
patent: 5504357 (1996-04-01), Kim et al.
patent: 5512770 (1996-04-01), Hong
patent: 5514604 (1996-05-01), Brown
patent: 5573837 (1996-11-01), Roberts et al.
patent: 5574621 (1996-11-01), Sakamoto et al.
patent: 5612559 (1997-03-01), Park et al.
patent: 5619057 (1997-04-01), Komatsu
patent: 5693549 (1997-12-01), Kim
patent: 5714412 (1998-02-01), Liang et al.
patent: 5714786 (1998-02-01), Gonzalez et al.
patent: 5739066 (1998-04-01), Pan
patent: 5753947 (1998-05-01), Gonzalez
patent: 5763305 (1998-06-01), Chao
patent: 5792687 (1998-08-01), Jeng
patent: 5792690 (1998-08-01), Sung
patent: 5798544 (1998-08-01), Ohya et al.
patent: 5817552 (1998-10-01), Roesner et al.
patent: 5841611 (1998-11-01), Sakakima et al.
patent: 5869359 (1999-02-01), Prabhakar
patent: 5909618 (1999-06-01), Forbes et al.
patent: 5963469 (1999-10-01), Forbes
patent: 5972754 (1999-10-01), Ni et al.
patent: 5977579 (1999-11-01), Noble
patent: 6005273 (1999-12-01), Gonzalez et al.
patent: 6015990 (2000-01-01), Hieda et al.
patent: 6033963 (2000-03-01), Huang et al.
patent: 6054355 (2000-04-01), Inumiya et al.
patent: 6063669 (2000-05-01), Takaishi
patent: 6072209 (2000-06-01), Noble et al.
patent: 6090693 (2000-07-01), Gonzalez et al.
patent: 6096596 (2000-08-01), Gonzalez
patent: 6114735 (2000-09-01), Batra et al.
patent: 6124611 (2000-09-01), Mori
patent: 6127699 (2000-10-01), Ni et al.
patent: 6150687 (2000-11-01), Noble et al.
patent: 6168996 (2001-01-01), Numazawa et al.
patent: 6184086 (2001-02-01), Kao
patent: 6187643 (2001-02-01), Borland
patent: 6191470 (2001-02-01), Forbes et al.
patent: 6215149 (2001-04-01), Lee et al.
patent: 6225669 (2001-05-01), Long et al.
patent: 6255165 (2001-07-01), Thurgate et al.
patent: 6259142 (2001-07-01), Dawson et al.
patent: 6297106 (2001-10-01), Pan et al.
patent: 6300177 (2001-10-01), Sundaresan et al.
patent: 6323506 (2001-11-01), Alok
patent: 6337497 (2002-01-01), Hanafi et al.
patent: 6340614 (2002-01-01), Tseng
patent: 6348385 (2002-02-01), Cha et al.
patent: 6349052 (2002-02-01), Hofmann et al.
patent: 6362506 (2002-03-01), Miyai
patent: 6383879 (2002-05-01), Kizilyalli et al.
patent: 6391726 (2002-05-01), Manning
patent: 6414356 (2002-07-01), Forbes et al.
patent: 6417085 (2002-07-01), Batra et al.
patent: 6420786 (2002-07-01), Gonzalez et al.
patent: 6476444 (2002-11-01), Min
patent: 6495474 (2002-12-01), Rafferty et al.
patent: 6495890 (2002-12-01), Ono
patent: 6498062 (2002-12-01), Durcan et al.
patent: 6552401 (2003-04-01), Dennison
patent: 6563183 (2003-05-01), En et al.
patent: 6566193 (2003-05-01), Hofmann et al.
patent: 6573559 (2003-06-01), Kitada et al.
patent: 6586808 (2003-07-01), Xiang et al.
patent: 6624032 (2003-09-01), Alavi et al.
patent: 6630720 (2003-10-01), Maszara et al.
patent: 6632714 (2003-10-01), Yoshikawa
patent: 6632723 (2003-10-01), Watanabe et al.
patent: 6696746 (2004-02-01), Farrar et al.
patent: 6717200 (2004-04-01), Schamberger et al.
patent: 6727137 (2004-04-01), Brown
patent: 6753228 (2004-06-01), Azam et al.
patent: 6818515 (2004-11-01), Lee et al.
patent: 6818937 (2004-11-01), Noble et al.
patent: 6818947 (2004-11-01), Gerbs et al.
patent: 6844591 (2005-01-01), Tran
patent: 6864536 (2005-03-01), Lin et al.
patent: 6888198 (2005-05-01), Krivokapic
patent: 6888770 (2005-05-01), Ikehashi
patent: 6916711 (2005-07-01), Yoo
patent: 6924190 (2005-08-01), Dennison
patent: 6939763 (2005-09-01), Schloesser et al.
patent: 6969662 (2005-11-01), Fazan et al.
patent: 7005710 (2006-02-01), Gonzalez et al.
patent: 7027334 (2006-04-01), Ikehashi et al.
patent: 7030436 (2006-04-01), Forbes
patent: 7042009 (2006-05-01), Shaheen et al.
patent: 7071043 (2006-07-01), Tang et al.
patent: 7091092 (2006-08-01), Sneelal et al.
patent: 7122425 (2006-10-01), Chance et al.
patent: 7125774 (2006-10-01), Kim et al.
patent: 7135371 (2006-11-01), Han et al.
patent: 7148527 (2006-12-01), Kim et al.
patent: 7214621 (2007-05-01), Nejad et al.
patent: 7244659 (2007-07-01), Tang et al.
patent: 7262089 (2007-08-01), Abbott et al.
patent: 7282401 (2007-10-01), Juengling
patent: 7285812 (2007-10-01), Tang et al.
patent: 7349232 (2008-03-01), Wang et al.
patent: 7361569 (2008-04-01), Tran et al.
patent: 7384849 (2008-06-01), Parekh et al.
patent: 7390746 (2008-06-01), Bai et al.
patent: 7393789 (2008-07-01), Abatchev et al.
patent: 7396781 (2008-07-01), Wells
patent: 7413981 (2008-08-01), Tang et al.
patent: 7429536 (2008-09-01), Abatchev et al.
patent: 7435536 (2008-10-01), Sandhu et al.
patent: 7455956 (2008-11-01), Sandhu et al.
patent: 7465616 (2008-12-01), Tang et al.
patent: 7488685 (2009-02-01), Kewley
patent: 7547640 (2009-06-01), Abatchev et al.
patent: 7547945 (2009-06-01), Tang et al.
patent: 7560390 (2009-07-01), Sant et al.
patent: 7589995 (2009-09-01), Tang et al.
patent: 2001/0017390 (2001-08-01), Long et al.
patent: 2001/0025973 (2001-10-01), Yamada et al.
patent: 2001/0038123 (2001-11-01), Yu
patent: 2001/0052617 (2001-12-01), Kitada et al.
patent: 2002/0127796 (2002-09-01), Hofmann et al.
patent: 2002/0127798 (2002-09-01), Prall
patent: 2002/0130378 (2002-09-01), Forbes et al.
patent: 2002/0135030 (2002-09-01), Horikawa
patent: 2002/0153579 (2002-10-01), Yamamoto
patent: 2002/0163039 (2002-11-01), Clevenger et al.
patent: 2002/0192911 (2002-12-01), Parke
patent: 2003/0001290 (2003-01-01), Nitayama et al.
patent: 2003/0011032 (2003-01-01), Umebayashi
patent: 2003/0042512 (2003-03-01), Gonzalez
patent: 2003/0092238 (2003-05-01), Eriguchi
patent: 2003/0094651 (2003-05-01), Suh
patent: 2003/0161201 (2003-08-01), Sommer et al.
patent: 2003/0164527 (2003-09-01), Sugi et al.
patent: 2003/0169629 (2003-09-01), Goebel et al.
patent: 2003/0170955 (2003-09-01), Kawamura et al.
patent: 2003/0234414 (2003-12-01), Brown
patent: 2004/0009644 (2004-01-01), Suzuki
patent: 2004/0034587 (2004-02-01), Amberson et al.
patent: 2004/0061148 (2004-04-01), Hsu
patent: 2004/0070028 (2004-04-01), Azam et al.
patent: 2004/0092115 (2004-05-01), Hsieh et al.
patent: 2004/0125636 (2004-07-01), Kurjanowicz et al.
patent: 2004/0184298 (2004-09-01), Takahashi et al.
patent: 2004/0197995 (2004-10-01), Lee et al.
patent: 2004/0222458 (2004-11-01), Hsieh et al.
patent: 2004

Affiliated with

Also associated with

Rating

Methods of forming field effect transistors, methods of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of forming field effect transistors, methods of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming field effect transistors, methods of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2673677