Methods of forming field effect transistors including raised...

Details Methods of forming field effect transistors including raised... Methods of forming field effect transistors including raised...

2005-10-04

2005-10-04

Zarneke, David (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S270000, C438S299000, C438S297000, C438S424000, C438S425000, C438S289000, C438S151000

Reexamination Certificate

active

06951785

ABSTRACT:
A method of forming a field effect transistor may include forming a doped layer at a surface of a semiconductor substrate, and forming a groove through the doped layer at the surface of the semiconductor substrate while maintaining portions of the doped layer on opposite sides of the groove. A gate insulating layer may be formed on a surface of the groove, and a gate electrode may be formed on the gate insulating layer in the groove.

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Notice to Submit Response, Korean Application No. 10-2002-0041671 Jan. 19, 2005, and English Translation thereof.
Stanley Wolf; “Silicon Processing for the VLSI ERA”, vol. 2: Process Integration, Lattice Press (1990), pp. 158, and 298-367.

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