Methods of forming field effect transistors having...

Details Methods of forming field effect transistors having... Methods of forming field effect transistors having...

2011-04-12

2011-04-12

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S265000, C438S696000

Reexamination Certificate

active

07923365

ABSTRACT:
Methods of forming integrated circuit devices include forming a field effect transistor having a gate electrode, a sacrificial spacer on a sidewall of the gate electrode and silicided source/drain regions. The sacrificial spacer is used as an implantation mask when forming highly doped portions of the source/drain regions. The sacrificial spacer is then removed from the sidewall of the gate electrode. A stress-inducing electrically insulating layer, which is configured to induce a net tensile stress (for NMOS transistors) or compressive stress (for PMOS transistors) in a channel region of the field effect transistor, is then formed on the sidewall of the gate electrode.

REFERENCES:
patent: 6184157 (2001-02-01), Hsu et al.
patent: 6372589 (2002-04-01), Yu
patent: 6869866 (2005-03-01), Chidambarrao et al.
patent: 7022561 (2006-04-01), Huang et al.
patent: 7052946 (2006-05-01), Chen et al.
patent: 7189624 (2007-03-01), Ito
patent: 7297584 (2007-11-01), Park et al.
patent: 7396718 (2008-07-01), Frohberg et al.
patent: 7482215 (2009-01-01), Dyer et al.
patent: 7534678 (2009-05-01), Lee et al.
patent: 2003/0040158 (2003-02-01), Saitoh
patent: 2004/0021160 (2004-02-01), Eguchi et al.
patent: 2005/0048732 (2005-03-01), Park et al.
patent: 2005/0098829 (2005-05-01), Doris et al.
patent: 2005/0199963 (2005-09-01), Aoyama
patent: 2005/0218455 (2005-10-01), Maeda et al.
patent: 2005/0230756 (2005-10-01), Chang et al.
patent: 2006/0011586 (2006-01-01), Shea
patent: 2006/0019438 (2006-01-01), Harakawa
patent: 2006/0046400 (2006-03-01), Burbach et al.
patent: 2006/0081896 (2006-04-01), Maeda
patent: 2006/0118879 (2006-06-01), Li
patent: 2006/0205169 (2006-09-01), Yoon et al.
patent: 2007/0057324 (2007-03-01), Tews et al.
patent: 2007/0099360 (2007-05-01), Lee et al.
patent: 2007/0252230 (2007-11-01), Zhu et al.
patent: 2007/0257336 (2007-11-01), Matsumoto
patent: 2008/0026523 (2008-01-01), Lee et al.
patent: 2008/0050869 (2008-02-01), Sudo
patent: 2008/0073713 (2008-03-01), Kim et al.
patent: 2008/0261385 (2008-10-01), Jawarani et al.
patent: 2009/0101945 (2009-04-01), Yamaguchi et al.
patent: 06-163578 (1994-06-01), None
patent: 10-177938 (1998-06-01), None
patent: 2001-352055 (2001-12-01), None
patent: 2003-060076 (2003-02-01), None
patent: 2003086704 (2003-03-01), None
patent: 2003-273240 (2003-09-01), None
patent: 2003273240 (2003-09-01), None
patent: 2004047608 (2004-02-01), None
patent: 2004128316 (2004-04-01), None
patent: 2005-064314 (2005-03-01), None
patent: 2006080161 (2006-03-01), None
patent: 2006-173432 (2006-06-01), None
patent: 2006-237070 (2006-09-01), None
patent: 10-1997-0018691 (1997-04-01), None
patent: 100183785 (1998-12-01), None
patent: 10-2001-0076522 (2001-08-01), None
patent: 1020020017845 (2002-03-01), None
patent: 1020020074551 (2002-10-01), None
patent: 1020030076354 (2003-09-01), None
patent: 1020040070794 (2004-06-01), None
patent: 10-2004-0107477 (2004-12-01), None
patent: 1020050049243 (2005-05-01), None
patent: 1020060000912 (2006-01-01), None
patent: 1020060004595 (2006-01-01), None
patent: 1020060119773 (2006-11-01), None
U.S. Appl. No. 11/691,691, filed Mar. 27, 2007, Lee et al.
U.S. Appl. No. 11/831,223, filed Jul. 31, 2007, Nam et al.

Affiliated with

Also associated with

Rating

Methods of forming field effect transistors having... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of forming field effect transistors having..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming field effect transistors having... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2642201