Methods of forming field effect transistors having metal...

Details Methods of forming field effect transistors having metal... Methods of forming field effect transistors having metal...

2005-09-20

2008-08-26

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S299000, C438S301000, C438S303000

Reexamination Certificate

active

07416968

ABSTRACT:
Methods of forming field effect transistors according to embodiments of the invention include forming a conductive gate electrode (e.g., polysilicon gate electrode) on a semiconductor substrate and forming a first metal layer on the conductive gate electrode. This first metal layer may include a material selected from a group consisting of nickel, cobalt, titanium, tantalum and tungsten. The first metal layer and the conductive gate electrode are thermally treated for a sufficient duration to convert a first portion of the conductive gate electrode into a first metal silicide region. The first metal layer and the first metal silicide region are then removed to expose a second portion of the conductive gate electrode. A second metal layer is then formed on the second portion of the conductive gate electrode. This second metal layer may include a material selected from a group consisting of nickel, cobalt, titanium, tantalum and tungsten. The second metal layer and the second portion of the conductive gate electrode are thermally treated for a sufficient duration to thereby convert the second portion of the conductive gate electrode into a second metal silicide region.

REFERENCES:
patent: 6060387 (2000-05-01), Shepela et al.
patent: 6204103 (2001-03-01), Bai et al.
patent: 2004/0038435 (2004-02-01), Wieczorek et al.
patent: 2004/0043595 (2004-03-01), Lee et al.
patent: 1020040008407 (2004-01-01), None

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