Methods of forming field effect transistors and related field ef

Details Methods of forming field effect transistors and related field ef Methods of forming field effect transistors and related field ef

1997-11-12

2000-02-15

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438289, 438305, H01L 21336

Patent

active

060252324

ABSTRACT:
Methods of forming field effect transistors and related field effect transistor constructions are described. A masking layer is formed over a semiconductive substrate and an opening having sidewalls is formed therethrough. The opening defines a substrate area over which a field effect transistor gate is to be formed. A dopant of a first conductivity type is provided through the opening and into the substrate. Sidewall spacers are formed over respective sidewalls of the opening. Enhancement dopant of a second conductivity type which is different from the first conductivity type is provided through the opening and into the substrate. A transistor gate is formed within the opening proximate the sidewall spacers, and source/drain regions of the second conductivity type are diffused into the substrate operably proximate the transistor gate. The first conductivity type dopant forms a halo region proximate the source/drain regions and lightly doped drain (LDD) regions for the transistor.

REFERENCES:
patent: 4771014 (1988-09-01), Liou et al.
patent: 5171700 (1992-12-01), Zamanian
patent: 5434093 (1995-07-01), Chau et al.
patent: 5736446 (1998-04-01), Wu
patent: 5849615 (1998-12-01), Ahmad et al.
patent: 5889732 (1999-05-01), Gardner et al.
patent: 5899719 (1999-05-01), Hong
patent: 5930615 (1999-07-01), Manning

Affiliated with

Also associated with

Rating

Methods of forming field effect transistors and related field ef does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of forming field effect transistors and related field ef, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming field effect transistors and related field ef will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1905351