Methods of forming dual-damascene metal interconnect...

Details Methods of forming dual-damascene metal interconnect... Methods of forming dual-damascene metal interconnect...

2009-01-09

2010-12-21

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S638000, C438S952000, C257SE21579

Reexamination Certificate

active

07855142

ABSTRACT:
Methods of forming dual-damascene metal interconnect structures include forming an electrically insulating layer on an integrated circuit substrate and then forming a hard mask layer on the electrically insulating layer. The hard mask layer may include a stacked composite of at least four electrically insulating material layers therein. The hard mask layer may also have separate trench and via patterns therein that are respectively defined by at least first and second ones of the electrically insulating material layers and at least third and fourth ones of the electrically insulating material layers.

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