Methods of forming DRAM arrays

Details Methods of forming DRAM arrays Methods of forming DRAM arrays

2008-02-14

2011-12-06

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S241000, C438S592000, C438S595000, C438S700000, C438S652000

Reexamination Certificate

active

08071441

ABSTRACT:
Some embodiments include methods of forming transistor gates. A gate stack is placed within a reaction chamber and subjected to at least two etches, and to one or more depositions to form a transistor gate. The transistor gate may comprise at least one electrically conductive layer over a semiconductor material-containing layer. At least one of the one or more depositions may form protective material. The protective material may extend entirely across the at least one electrically conductive layer, and only partially across the semiconductor material-containing layer to leave unlined portions of the semiconductor material-containing layer. The unlined portions of the semiconductor material-containing layer may be subsequently oxidized.

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