Methods of forming DRAM arrays

Details Methods of forming DRAM arrays Methods of forming DRAM arrays

2009-12-04

2011-10-04

Coleman, William D (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21035, C438S723000

Reexamination Certificate

active

08030156

ABSTRACT:
Methods of etching into silicon oxide-containing material with an etching ambient having at least 75 volume percent helium. The etching ambient may also include carbon monoxide, O2and one or more fluorocarbons. The openings formed in the silicon oxide-containing material may be utilized for fabrication of container capacitors, and such capacitors may be incorporated into DRAM.

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