Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-06-26
2007-06-26
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S270000
Reexamination Certificate
active
11148760
ABSTRACT:
Methods are provided for forming a device, such as a semiconductor device. A field region and an active region of a substrate are defined in which the field region has an upper surface that extends further away from the substrate and is higher than an upper surface of the active region. A hard mask layer is formed with a substantially planar upper surface on the field region and the active region. The hard mask layer is partially etched to form a hard mask pattern that exposes at least a portion of the active region. The substrate is partially etched in the active region using the hard mask pattern as an etching mask to form a gate trench. A recessed gate electrode if formed on the substrate in the gate trench.
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Ha Jae-Kyu
Park Jong-Chul
Le Thao P.
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd
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