Methods of forming contacts for integrated circuits using chemic

Details Methods of forming contacts for integrated circuits using chemic Methods of forming contacts for integrated circuits using chemic

1998-10-20

2000-10-31

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438627, 438628, 438639, 438648, H01L 214763

Patent

active

061402230

ABSTRACT:
A thin conductive layer is formed on a contact hole bottom and on a contact hole sidewall in an insulating layer on an integrated circuit substrate, and then both chemical vapor deposition and physical vapor deposition are performed, to form a glue layer on the thin conductive layer. By performing both chemical vapor deposition and physical vapor deposition, the desirable characteristics of both processes may be obtained and the drawbacks in each of these processes may be compensated. Preferably, chemical vapor deposition of a material is performed, and physical vapor deposition of the same material is performed, to form the glue layer on the thin conductive layer. More particularly, chemical vapor deposition of titanium nitride, and physical vapor deposition of titanium nitride may be performed to form the glue layer on the thin conductive layer. As an alternative to titanium nitride, tungsten nitride may be used. After forming the glue layer, the contact hole may be filled with conductive material such as tungsten.

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