Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-10-20
2000-10-31
Monin, Jr., Donald L.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438627, 438628, 438639, 438648, H01L 214763
Patent
active
061402230
ABSTRACT:
A thin conductive layer is formed on a contact hole bottom and on a contact hole sidewall in an insulating layer on an integrated circuit substrate, and then both chemical vapor deposition and physical vapor deposition are performed, to form a glue layer on the thin conductive layer. By performing both chemical vapor deposition and physical vapor deposition, the desirable characteristics of both processes may be obtained and the drawbacks in each of these processes may be compensated. Preferably, chemical vapor deposition of a material is performed, and physical vapor deposition of the same material is performed, to form the glue layer on the thin conductive layer. More particularly, chemical vapor deposition of titanium nitride, and physical vapor deposition of titanium nitride may be performed to form the glue layer on the thin conductive layer. As an alternative to titanium nitride, tungsten nitride may be used. After forming the glue layer, the contact hole may be filled with conductive material such as tungsten.
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Kim Jeong-Seok
Park Joo-Wook
Monin, Jr. Donald L.
Peratta Ginette
Samsung Electronics Co,. Ltd.
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