Methods of forming contact structures for memory cells using...

Details Methods of forming contact structures for memory cells using... Methods of forming contact structures for memory cells using...

2004-07-26

2010-06-08

Nguyen, Thanh (Department: 2893)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S638000, C438S639000, C257SE21577

Reexamination Certificate

active

07732317

ABSTRACT:
Methods of forming a cell of a NOR-type flash memory device are provided in which a first gate pattern having a first sidewall and a second gate pattern having a second sidewall that opposes the first sidewall are formed on a semiconductor substrate. A source/drain region is formed in the semiconductor substrate between the first and second gate patterns. An etch stop layer is formed on the first and second sidewalls that defines a gap region. A dielectric layer is formed in the gap region, and is then etched to form a contact hole. Finally, a conductive material is deposited in the contact hole.

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