Methods of forming contact plugs including polysilicon doped...

Details Methods of forming contact plugs including polysilicon doped... Methods of forming contact plugs including polysilicon doped...

2005-02-22

2005-02-22

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S647000

Reexamination Certificate

active

06858529

ABSTRACT:
Forming a semiconductor device can include forming an insulating layer on a semiconductor substrate including a conductive region thereof, wherein the insulating layer has a contact hole therein exposing a portion of the conductive region. A polysilicon contact plug can be formed in the contact hole wherein at least a portion of the polysilicon contact plug is doped with an element having a diffusion coeffient that is less than a diffusion coefficient of phosphorus (P). Related structures are also discussed.

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English Translation of Korean Office Action dated Mar. 23, 2004.

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