Methods of forming conductive polysilicon thin films via...

Details Methods of forming conductive polysilicon thin films via... Methods of forming conductive polysilicon thin films via...

2006-05-31

2009-11-24

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21197

Reexamination Certificate

active

07622383

ABSTRACT:
A method of forming a conductive polysilicon thin film and a method of manufacturing a semiconductor device using the same are provided. The method of forming a conductive polysilicon thin film may comprise simultaneously supplying a Si precursor having halogen elements as a first reactant and a dopant to a substrate to form a first reactant adsorption layer that is doped with impurities on the substrate and then supplying a second reactant having H (hydrogen) to the first reactant adsorption layer to react the H of the second reactant with the halogen elements of the first reactant to form a doped Si atomic layer on the substrate.

REFERENCES:
patent: 5296392 (1994-03-01), Grula et al.
patent: 6184117 (2001-02-01), Lu
patent: 6468924 (2002-10-01), Lee et al.
patent: 6541354 (2003-04-01), Shimoda et al.
patent: 6573180 (2003-06-01), Won
patent: 2005/0260347 (2005-11-01), Narwankar et al.
patent: 2006/0199357 (2006-09-01), Wan et al.
patent: 2006/0249800 (2006-11-01), Tanaka
patent: 2007/0054475 (2007-03-01), Lee et al.
patent: 2007/0128858 (2007-06-01), Haukka et al.
patent: 2008/0032469 (2008-02-01), Oh et al.
patent: 05-029227 (1993-02-01), None
patent: 06-291061 (1994-10-01), None

Affiliated with

Also associated with

Rating

Methods of forming conductive polysilicon thin films via... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of forming conductive polysilicon thin films via..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming conductive polysilicon thin films via... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4100938