Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Patent
1997-10-20
2000-04-18
Bos, Steven
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
438720, 438725, 438733, H01L 21311, H01L 21302
Patent
active
060515023
ABSTRACT:
The invention encompasses methods of forming conductive components and methods of forming conductive lines. In one aspect, the invention includes a method of forming a conductive component comprising: a) anisotropically etching a conductive material into a conductive component shape having at least one sidewall, and forming an etch blocking layer over the sidewall during the anisotropic etching; and b) removing the etch blocking layer with an etchant comprising fluorine and a noble element. In another aspect, the invention includes a method of forming a conductive line comprising: a) forming a layer of conductive material; b) forming a masking layer over a portion of the layer of conductive material in the shape of a conductive line; c) anisotropically etching the conductive material with the masking layer in place to form a conductive line beneath the masking layer, the conductive line having sidewalls, a blocking layer forming over the sidewalls during the anisotropic etching; and d) removing the blocking layer with an etchant comprising fluorine and a noble element.
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Blalock Guy T.
Frankamp Harlan H.
Bos Steven
Micro)n Technology, Inc.
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