Methods of forming capacitors, methods of forming...

Details Methods of forming capacitors, methods of forming... Methods of forming capacitors, methods of forming...

2006-02-07

2006-02-07

Kennedy, Jennifer (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S253000, C438S250000, C438S396000, C438S397000, C438S393000

Reexamination Certificate

active

06995059

ABSTRACT:
Methods of forming capacitors, methods of forming capacitor-over-bit line memory circuitry, and related integrated circuitry constructions are described. In one embodiment, a capacitor storage node is formed having an uppermost surface and an overlying insulative material over the uppermost surface. Subsequently, a capacitor dielectric functioning region is formed discrete from the overlying insulative material operably proximate at least a portion of the capacitor storage node. A cell electrode layer is formed over the capacitor dielectric functioning region and the overlying insulative material.

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