Methods of forming capacitors and resultant capacitor...

Details Methods of forming capacitors and resultant capacitor... Methods of forming capacitors and resultant capacitor...

2005-01-18

2005-01-18

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S255000, C438S396000, C438S398000, C438S666000

Reexamination Certificate

active

06844230

ABSTRACT:
Methods of forming capacitors and resultant capacitor structures are described. In one embodiment, a capacitor storage node layer is formed over a substrate and has an uppermost rim defining an opening into an interior volume. At least a portion of the rim is capped by forming a material which is different from the capacitor storage node layer over the rim portion. After the rim is capped, a capacitor dielectric region and a cell electrode layer are formed over the storage node layer.

REFERENCES:
patent: 5338700 (1994-08-01), Dennison et al.
patent: 5905280 (1999-05-01), Liu et al.
patent: 5981333 (1999-11-01), Parekh et al.
patent: 6136646 (2000-10-01), Linliu et al.
patent: 6150211 (2000-11-01), Zahurak
patent: 6159793 (2000-12-01), Lou
patent: 6235605 (2001-05-01), Ping
patent: 6326277 (2001-12-01), DeBoer
patent: 6403442 (2002-06-01), Reinberg

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