Methods of forming capacitors

Details Methods of forming capacitors Methods of forming capacitors

2006-07-17

2009-12-22

Jackson, Jr., Jerome (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S770000, C257SE21008

Reexamination Certificate

active

07635623

ABSTRACT:
A method of forming a capacitor includes forming a conductive first capacitor electrode material comprising TiN over a substrate. TiN of the TiN-comprising material is oxidized effective to form conductive TiOxNyhaving resistivity no greater than 1 ohm·cm over the TiN-comprising material where x is greater than 0 and y is from 0 to 1.4. A capacitor dielectric is formed over the conductive TiOxNy. Conductive second capacitor electrode material is formed over the capacitor dielectric. Other aspects and implementations are contemplated, including capacitors independent of method of fabrication.

REFERENCES:
patent: 6727140 (2004-04-01), Basceri et al.
patent: 7033884 (2006-04-01), Basceri et al.
patent: 7420198 (2008-09-01), Baek et al.
patent: 2002/0022334 (2002-02-01), Yang et al.

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