Methods of forming capacitor structures and DRAM arrays

Details Methods of forming capacitor structures and DRAM arrays Methods of forming capacitor structures and DRAM arrays

2005-03-08

2005-03-08

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S254000, C438S255000, C438S396000, C438S397000, C438S398000, C438S719000, C438S739000, C438S753000, C438S964000

Reexamination Certificate

active

06864138

ABSTRACT:
The invention encompasses DRAM constructions, capacitor constructions, integrated circuitry, and methods of forming DRAM constructions, integrated circuitry and capacitor constructions. The invention encompasses a method of forming a capacitor wherein: a) a first layer is formed; b) a semiconductive material masking layer is formed over the first layer; c) an opening is etched through the masking layer and first layer to a node; d) a storage node layer is formed within the opening and in electrical connection with the masking layer; e) a capacitor storage node is formed from the masking layer and the storage node layer; and f) a capacitor dielectric layer and outer capacitor plate are formed operatively proximate the capacitor storage node.

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