Methods of forming capacitor constructions

Details Methods of forming capacitor constructions Methods of forming capacitor constructions

2005-05-31

2005-05-31

Eckert, George (Department: 2815)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S253000, C438S256000, C438S399000

Reexamination Certificate

active

06900106

ABSTRACT:
The invention includes a method of forming a semiconductor construction. A semiconductor substrate is provided, and a conductive node is formed to be supported by the semiconductor substrate. A first conductive material is formed over the conductive node and shaped as a container. The container has an opening extending therein and an upper surface proximate the opening. The container opening is at least partially filled with an insulative material. A second conductive material is formed over the at least partially filled container opening and physically against the upper surface of the container. The invention also includes semiconductor structures.

REFERENCES:
patent: 5371701 (1994-12-01), Lee et al.
patent: 5565708 (1996-10-01), Ohsaki et al.
patent: 5837591 (1998-11-01), Shimada et al.
patent: 5950092 (1999-09-01), Figura et al.
patent: 6017144 (2000-01-01), Guo et al.
patent: 6025652 (2000-02-01), Tsukamoto
patent: 6174781 (2001-01-01), Dai et al.
patent: 6248640 (2001-06-01), Nam
patent: 6287935 (2001-09-01), Coursey
patent: 6300216 (2001-10-01), Shan
patent: 6319771 (2001-11-01), Tseng
patent: 6323558 (2001-11-01), Jeong
patent: 6380579 (2002-04-01), Nam et al.
patent: 6472229 (2002-10-01), Aoki et al.
patent: 6492245 (2002-12-01), Liu et al.
patent: 6534357 (2003-03-01), Basceri et al.
patent: 6645811 (2003-11-01), Roh
patent: 6720609 (2004-04-01), Deboer et al.
patent: 2002/0153552 (2002-10-01), Hieda et al.
patent: 2003/0047734 (2003-03-01), Fu et al.
patent: 2004/0048467 (2004-03-01), Marsh
Wolf et al., “Silicon Processing for the VLSI Era vol. 1-Process Technology”, Lattic Press, 1986, pp. 161-175.

Affiliated with

Also associated with

Rating

Methods of forming capacitor constructions does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of forming capacitor constructions, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming capacitor constructions will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3433551