Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-03-25
2008-03-25
Tran, Minhloan (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21646, C257SE21084, C257S906000, C438S387000, C438S253000
Reexamination Certificate
active
07348234
ABSTRACT:
The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second regions is provided. The first and second regions can be defined by a single mask, and accordingly can be considered to be self-aligned relative to one another. A first electrically conductive material is formed over the first region, and a second electrically conductive material is formed over the second region. The first and second electrically conductive materials are exposed to an electrolytic solution while providing electrical current to the first and second electrically conductive materials. A desired substance is selectively electroplated onto the first electrically conductive material during the exposing of the first and second electrically conductive materials to the electrolytic solution. The invention also includes methods of forming capacitor constructions.
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PCT/US03/21637; Filed Oct. 2003; Search Report; 10 pp.
Collins Dale W.
Klein Rita J.
Lane Richard H.
Bomkamp Eric A
Micro)n Technology, Inc.
Tran Minhloan
Wells St. John P.S.
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